DSS 2 X 160-01A IXYS SEMICONDUCTOR, DSS 2 X 160-01A Datasheet - Page 2

• Manufacturer Part Number: DSS 2 X 160-01A
• Description: DIODE, SCHOTTKY, 2X160A
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DSS 2 X 160-01A

• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 80A
• Forward Voltage Vf Max: 810mV
• Forward Surge Current Ifsm Max: 1.4kA
• Operating Temperature: RoHS Compliant
• Diode Configuration: Dual
• Diode Type: Schottky

IXYS reserves the right to change limits, Conditions and dimensions.
© 2005 IXYS All rights reserved
I
Z
I
F(AV)
F
thJC
0.01
K/W
400
100
240
200
160
120
0.1
0.4
A
10
80
40
A
0.001
1
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
Fig. 1 Max. forward voltage
Fig. 4 Avg. forward current I
Fig. 6 Transient thermal impedance junction to case at various duty cycles
D=0.5
0.08
0.33
0.25
0.17
(Thermal Resistance)
40
drop characteristics
vs. case temperature T
Single Pulse
80
d=0.5
0.01
T
T
150°C
125°C
25°C
C
VJ
V
120
=
F
DC
C
F(AV)
160
V
C
0.1
P
0.001
I
(AV)
R
0.01
180
160
140
120
100
100
0.1
mA
10
80
60
40
20
W
1
0
0
0
Fig. 2 Typ. reverse current I
Fig. 5 Forward power loss characteristics
125°C
T
100°C
75°C
50°C
25°C
VJ
=150°C
20
50
vs. reverse voltage V
40
1
s
100
60
I
F(AV)
t
150
V
R
DSS2x160-01A
80
d =
DC
0.5
0.33
0.25
0.17
0.08
A
V
R
R
100
200
10
I
10000
10000
FSM
C
1000
1000
T
100
100
pF
A
10
0
Fig. 3 Typ. junction capacitance C
Note: All curves are per diode
20
DSS 2x160-01A
versus reverse voltage V
100
40
60
1000
V
t
T
R
P
VJ
80
= 25°C
µs
V
10000
2 - 2
100
T
R