MBR160 Vishay, MBR160 Datasheet - Page 2

• Manufacturer Part Number: MBR160
• Description: SCHOTTKY RECTIFIER, 1A 60V DO-204AL
• Manufacturer: Vishay

Specifications of MBR160

• Repetitive Reverse Voltage Vrrm Max: 60V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1V
• Forward Surge Current Ifsm Max: 150A
• Operating Temperature Range: -40°C To +150°C
• Diode Type: Schottky
• Voltage - Forward (vf) (max) @ If: 750mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 60V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.75 V
• Maximum Reverse Leakage Current: 500 uA
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: *MBR160

Document Number: 93439
MBR150, MBR160
Bulletin PD-20589 rev. C 12/04
Electrical Specifications
Thermal-Mechanical Specifications
Voltage Ratings
Absolute Maximum Ratings
T
T
R
wt
I
I
E
I
(*) dPtot
V
I
C
L
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle <2%
(**) Mounted 1 inch square PCB, Thermal Probe connected to lead 2mm from package
V
V
F(AV)
FSM
AR
RM
J
stg
S
thJL
AS
FM
T
R
RWM
dTj
Max. Junction Temperature Range(*) - 40 to 150
Max. Storage Temperature Range
Max. Thermal Resistance Junction
to Lead
Approximate Weight
Case Style
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
* See Fig. 4
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current
* See Fig. 2
Typical Junction Capacitance
Typical Series Inductance
Parameters
Parameters
Parameters
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(**)
(1)
(1)
Value
0.33(0.012) g (oz.)
- 40 to 150
150
1.0
2.0
1.0
DO-204AL(DO-41)
25
Value
Value
10000
0.75
0.65
0.75
0.82
0.9
1.0
0.5
8.0
80
10
55
5
Units
mJ
A
A
A
Units Conditions
Units Conditions
°C/W DC operation (*See Fig. 4)
V/µs
mA
mA
mA
pF
nH
°C
°C
V
V
V
V
V
V
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
T
Current decaying linearly to zero in 1 µsec
Frequency limited by T
10ms Sine or 6ms Rect. pulse
J
@ 1A
@ 2A
@ 3A
@ 1A
@ 2A
@ 3A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
= 25 °C, I
MBR150
J
J
J
R
= 25 °C
= 100°C
= 125 °C
= 5V
50
DC
R
AS
)
Conditions
(test signal range 100Khz to 1Mhz) 25°C
= 1 Amps, L = 4 mH
T
T
V
J
J
R
C
= 25 °C
= 125 °C
= rated V
= 75°C, rectangular wave form
J
max. V
R
A
Following any rated
load condition and with
rated V
= 1.5 x V
MBR160
www.vishay.com
60
RRM
R
typical
applied
2