1N5625-TAP Vishay, 1N5625-TAP Datasheet - Page 3

• Manufacturer Part Number: 1N5625-TAP
• Description: AVALANCHE DIODE, 3A, 400V, DO-201AD
• Manufacturer: Vishay

Specifications of 1N5625-TAP

• Repetitive Reverse Voltage Vrrm Max: 400V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 6µs
• Forward Surge Current Ifsm Max: 100A
• Diode Type: Standard Recovery
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 400 V
• Forward Voltage Drop: 1 V
• Recovery Time: 6000 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 100 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-64
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88524
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
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Pulse Width = 300 μs
T
T
1.0
T
J
J
J
60
1 % Duty Cycle
= 125 °C
= 75 °C
= 25 °C
T
J
= 25 °C
1.1
80
This datasheet is subject to change without notice.
1.2
100
0.210 (5.3)
0.190 (4.8)
1.3
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
100
MIN.
MIN.
10
1
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1N5624GP thru 1N5627GP
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
Reverse Voltage (V)
10
www.vishay.com/doc?91000
V
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
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p-p
100
3