BYV98-200-TR Vishay, BYV98-200-TR Datasheet - Page 2

AVALANCHE DIODE, 4A, 200V, SOD-64

BYV98-200-TR

Manufacturer Part Number
BYV98-200-TR
Description
AVALANCHE DIODE, 4A, 200V, SOD-64
Manufacturer
Vishay
Datasheet

Specifications of BYV98-200-TR

Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
4A
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
70A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BYV98-50, BYV98-100, BYV98-150, BYV98-200
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Fig. 2 - Max. Reverse Current vs. Junction Temperature
15784
15785
1000
1000
120
100
100
100
80
60
40
20
10
10
0
1
1
25
25
25
150 K/W
50
50
50
70 K/W
T
T
j
j
– Junction Temperature ( °C )
– Junction Temperature ( °C )
25 K/W
R
75
75
75
thJA
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
=
BYV98–50
100
100
100
BYV98–100
I
F
BYV98–150
= 0.5 A, I
125
V
BYV98–200
125
125
V
R
R
V
TEST CONDITION
= V
= V
R
amb
= V
RRM
I
150
150
150
Ultra Fast Avalanche Sinterglass
V
R
RRM
R
I
R
RRM
= 100 μA
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 5 A
, T
175
175
175
amb
RRM
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
Diode
BYV98-100
BYV98-150
BYV98-200
BYV98-50
PART
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
15783
17194
SYMBOL
Fig. 3 - Diode Capacitance vs. Reverse Voltage
DiodesEurope@vishay.com
180
160
140
120
100
V
V
V
V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
80
60
40
20
(BR)R
(BR)R
(BR)R
(BR)R
V
0
I
I
t
R
R
rr
0.1
F
0
20 40 60 80 100 120 140 160 180
R
PCB: d = 25 mm
thJA
T
amb
MIN.
120
170
220
60
V
= 70 K/W
-
-
-
-
– Ambient Temperature ( °C )
R
1.0
– Reverse Voltage ( V )
TYP.
-
-
-
-
-
-
-
-
R
10.0
half sinewave
Document Number: 86046
thJA
V
R
l = 10 mm
= V
= 25 K/W
MAX.
Rev. 1.7, 04-Aug-10
RRM
200
1.1
10
35
-
-
-
-
100.0
UNIT
μA
μA
ns
V
V
V
V
V

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