80EBU04 Vishay, 80EBU04 Datasheet - Page 5

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80EBU04

Manufacturer Part Number
80EBU04
Description
FAST DIODE, 80A, 400V, POWERTAB
Manufacturer
Vishay
Series
FRED Pt™r
Datasheets

Specifications of 80EBU04

Repetitive Reverse Voltage Vrrm Max
400V
Forward Current If(av)
80A
Forward Voltage Vf Max
1.3V
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
800A
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
1.3V @ 80A
Voltage - Dc Reverse (vr) (max)
400V
Current - Average Rectified (io)
80A
Current - Reverse Leakage @ Vr
50µA @ 400V
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Through Hole, Radial
Package / Case
PowerTab™, PowIRtab™
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
400 V
Forward Voltage Drop
1.3 V
Recovery Time
60 ns
Forward Continuous Current
80 A
Max Surge Current
800 A
Reverse Current Ir
50 uA
Mounting Style
Screw
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
Other names
VS-80EBU04
VS-80EBU04
VS80EBU04
VS80EBU04

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
80EBU04PBF
Manufacturer:
HISILICON
Quantity:
201
Part Number:
80EBU04PBF
Manufacturer:
ST
Quantity:
20 000
Document Number: 93025
Revision: 07-Jul-09
(1) dI
(2) I
(3) t
0
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
through zero crossing
RRM
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
- peak reverse recovery current
F
For technical questions, contact:
to point where a line passing
Fig. 10 - Reverse Recovery Waveform and Definitions
Ultrafast Soft Recovery Diode,
Fig. 9 - Reverse Recovery Parameter Test Circuit
RRM
and 0.50 I
(1)
adjust
dI
80 A FRED Pt
F
/dt
dI
F
/dt
RRM
L = 70 µH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
diodestech@vishay.com
TM
IRFP250
and I
current during t
rr
(rec)M
0.75 I
- area under curve defined by t
RRM
t
D.U.T.
b
/dt - peak rate of change of
RRM
dI
0.5 I
Q
(rec)M
rr
Q
=
RRM
b
Vishay High Power Products
rr
/dt
portion of t
t
(4)
rr
x I
(5)
2
RRM
rr
rr
80EBU04
www.vishay.com
5

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