MBRF40035 GeneSiC Semiconductor, MBRF40035 Datasheet
MBRF40035
Manufacturer Part Number
MBRF40035
Description
SCHOTTKY RECTIFIER, 35V, 400A, TO-244AB
Manufacturer
GeneSiC Semiconductor
Datasheet
1.MBRF40035.pdf
(2 pages)
Specifications of MBRF40035
Repetitive Reverse Voltage Vrrm Max
35V
Forward Current If(av)
200A
Forward Voltage Vf Max
650mV
Forward Surge Current Ifsm Max
3kA
Diode Type
Schottky
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 100 V V
Maximum ratings, at T
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction
- case
Silicon Power
Schottky Diode
Parameter
RRM
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Symbol
Symbol
V
V
V
R
I
V
T
F,SM
V
RRM
RMS
I
T
I
thJC
DC
stg
F
R
F
j
T
V
I
V
C
F
R
R
= 200 A, T
= 25 °C, t
= 20 V, T
= 20 V, T
Conditions
T
Conditions
C
≤ 125 °C
p
j
j
j
= 125 °C
= 8.3 ms
= 25 °C
= 25 °C
MBRF40020 (R) MBRF40030 (R)
MBRF40020 (R) MBRF40030 (R)
-40 to 175
-40 to 175
3000
0.65
0.35
400
200
1
20
20
14
20
5
MBRF40020 thru MBRF40040R
-40 to 175
-40 to 175
3000
0.65
0.35
400
200
30
30
21
30
5
MBRF40035 (R)
MBRF40035 (R)
TO-244AB Package
-40 to 175
-40 to 175
3000
0.65
0.35
400
200
35
35
25
35
5
V
I
F
RRM
= 400 A
= 20 V - 100 V
MBRF40040 (R)
MBRF40040 (R)
-40 to 175
-40 to 175
3000
0.65
0.35
400
200
40
40
28
40
5
°C/W
Unit
Unit
mA
°C
°C
V
V
V
V
A
A
V
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MBRF40035 Summary of contents
Page 1
... V - 100 V RRM I = 400 A F TO-244AB Package MBRF40035 (R) MBRF40040 ( 400 400 400 3000 3000 3000 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 -40 to 175 MBRF40035 (R) MBRF40040 (R) 0.65 0.65 0. 200 200 200 0.35 0.35 0.35 Unit °C °C Unit °C/W ...
Page 2
MBRF40020 thru MBRF40040R 2 ...