BA159G Taiwan Semiconductor, BA159G Datasheet - Page 2

• Manufacturer Part Number: BA159G
• Description: DIODE, FAST, 1A
• Manufacturer: Taiwan Semiconductor

Specifications of BA159G

• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 250ns
• Forward Surge Current Ifsm Max: 30A
• Operating: RoHS Compliant
• Diode Type: Fast Recovery

FIG.3- TYPICAL FORWARD CHARACTERISTICS
1.0
1.5
1.0
3.0
0.3
0.1
.03
2.0
.01
10
20
.5
0
0.4
FIG.1- MAXIMUM FORWARD CURRENT DERATING
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
.375"(9.5mm)
Lead Length
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
0.6
25
CURVE
o
RATINGS AND CHARACTERISTIC CURVES (BA157G THRU BA159G)
FORWARD VOLTAGE. (V)
0.8
AMBIENT TEMPERATURE. ( C)
50
50
NONINDUCTIVE
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1.0
75
2. Rise Time=10ns max. Sourse Impedance=
1.2
1 megohm 22pf
50 ohms
NON
INDUCTIVE
DUT
100
10
NONINDUCTIVE
1.4
125
o
OSCILLOSCOPE
(NOTE 1)
1.6
150
1.8
175
PULSE
GENERATOR
(NOTE 2)
- 385 -
(-)
(+)
100
20
10
60
60
40
50
40
30
20
10
0
1
FIG.2- MAXIMUM NON-REPETITIVE PEAK FORDWARD
FIG.4- TYPICAL JUNCTION CAPACITANCE
1
+0.5A
-0.25A
-1.0A
0
SURGE CURRENT
2
2
8.3ms Single Half Sine Wave
JEDEC Method
4
NUMBER OF CYCLES AT 60Hz
4
trr
1cm
REVERSE VOLTAGE. (V)
6
SET TIME BASE FOR
5/ 10ns/ cm
6
10
10
20
40
40
Tj=25 C
60
0
100
100