12F80 Vishay, 12F80 Datasheet - Page 2

• Manufacturer Part Number: 12F80
• Description: STANDARD DIODE, 12A, 800V, DO-203AA
• Manufacturer: Vishay

Specifications of 12F80

• Repetitive Reverse Voltage Vrrm Max: 800V
• Forward Current If(av): 12A
• Forward Voltage Vf Max: 1.26V
• Forward Surge Current Ifsm Max: 265A
• Diode Type: Standard Recovery
• Voltage - Forward (vf) (max) @ If: 1.26V @ 38A
• Voltage - Dc Reverse (vr) (max): 800V
• Current - Average Rectified (io): 12A
• Current - Reverse Leakage @ Vr: 12mA @ 800V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 800 V
• Forward Voltage Drop: 1.26 V at 38 A
• Forward Continuous Current: 12 A
• Max Surge Current: 280 A
• Reverse Current Ir: 12000 uA
• Mounting Style: Stud
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *12F80; VS-12F80; VS-12F80; VS12F80; VS12F80

12F(R) Series
Vishay High Power Products
Note
(1)
www.vishay.com
2
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum on-repetitive peak
reverse power
Maximum peak, one-cycle forward,
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Allowable mounting torque
Approximate weight
Case style
Available only for avalanche version, all other parameters the same as 12F
2
2
t for fusing
√t for fusing
SYMBOL
SYMBOL
For technical questions, contact: [e-mail]
V
V
I
R
F(RMS)
R
I
P
I
F(AV)
F(TO)1
F(TO)2
V
T
I
FSM
I
2
r
r
T
thCS
R
thJC
Stg
2
FM
f1
f2
√t
J
(1)
t
Standard Recovery Diodes
180° conduction, half sine wave
10 µs square pulse, T
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
I
DC operation
Mounting surface, smooth, flat and greased
Not lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
pk
(Stud Version), 12 A
= 38 A, T
F(AV)
F(AV)
J
), T
), T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
= 25 °C, t
F(AV)
F(AV)
TEST CONDITIONS
TEST CONDITIONS
J
J
= T
= T
< I < π x I
< I < π x I
J
J
J
RRM
RRM
maximum
maximum
= T
p
= 400 µs rectangular wave
J
maximum
F(AV)
F(AV)
Sinusoidal half wave,
initial T
), T
), T
J
J
J
= T
= T
= T
J
J
J
maximum
maximum
maximum
1.5 + 0 - 10 %
1.2 + 0 - 10 %
- 65 to 175
- 65 to 200
VALUES
VALUES
10.70
3510
0.77
0.97
6.20
1.26
0.25
144
265
280
225
235
351
320
250
226
0.5
13
10
Document Number: 93487
12
19
DO-203AA (DO-4)
2
7
7
Revision: 29-Sep-08
UNITS
UNITS
lbf · in
lbf · in
N · m
N · m
A
K/W
K/W
A
mΩ
oz.
°C
°C
2
A
A
A
V
V
g
2
√s
s