BYT56B-TAP Vishay, BYT56B-TAP Datasheet - Page 2

• Manufacturer Part Number: BYT56B-TAP
• Description: AVALANCHE DIODE, 3A, 100V, SOD-64
• Manufacturer: Vishay

Specifications of BYT56B-TAP

• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 1.4V
• Reverse Recovery Time Trr Max: 100ns
• Forward Surge Current Ifsm Max: 80A
• Diode Type: Fast Recovery
• Product: Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.4 V
• Recovery Time: 100 ns
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-64
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
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2
MAXIMUM THERMAL RESISTANCE (T
PARAMETER
Junction ambient
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16365
0.001
0.01
949462
100
40
0.1
30
20
10
10
0
1
0
0
0.5
5
T
j
V
= 175 °C
F
l - Lead Length (mm)
- Forward Voltage (V)
1.0
10
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For technical questions within your region, please contact one of the following:
T
1.5
j
15
= 25 °C
I
F
T
= 0.5 A, I
l
L
Lead length l = 10 mm, T
= constant
2.0
V
20
On PC board with spacing 25 mm
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
l
V
2.5
25
RRM
R
I
R
TEST CONDITION
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 3 A
, T
amb
3.0
RRM
30
j
= 150 °C
amb
R
= 25 °C, unless otherwise specified)
= 0.25 A
= 25 °C, unless otherwise specified)
L
= constant
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
SYMBOL
SYMBOL
16366
16367
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1000
R
R
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
thJA
thJA
V
10
t
I
I
R
R
0
rr
F
1
25
0
PCB: d = 25 mm
V
R
R
thJA
20
T
= V
amb
50
T
= 70 K/W
j
RRM
MIN.
40
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
60
75
VALUE
80 100 120 140 160 180
25
70
100
TYP.
-
-
-
-
R
thJA
125
I = 10 mm
Document Number: 86032
half sinewave
= 25 K/W
V
R
= V
150
MAX.
150
100
1.4
Rev. 1.7, 30-Jul-10
RRM
5
175
UNIT
K/W
K/W
UNIT
μA
μA
ns
V