BYW32-TR Vishay, BYW32-TR Datasheet - Page 2

• Manufacturer Part Number: BYW32-TR
• Description: AVALANCHE DIODE, 200V, 2A, SOD-57
• Manufacturer: Vishay

Specifications of BYW32-TR

• Repetitive Reverse Voltage Vrrm Max: 200V
• Reverse Recovery Time Trr Max: 200ns
• Forward Surge Current Ifsm Max: 50A
• Diode Case Style: SOD-57
• No. Of Pins: 2
• Diode Type: Standard Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BYW32, BYW33, BYW34, BYW35, BYW36
Vishay Semiconductors
TYPICAL CHARACTERISTICS (T
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2
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse recovery time
Fig. 1 - Max. Thermal Resistance vs. Lead Length
16345
Fig. 2 - Forward Current vs. Forward Voltage
0.001
120
100
0.01
949552
100
80
60
40
20
0.1
10
0
1
0
0
T
0.5
j
5
= 175 °C
V
F
l - Lead Length (mm)
- Forward Voltage (V)
10
1.0
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T
15
j
1.5
= 25 °C
I
F
= 0.5 A, I
T
V
l
L
20
2.0
= constant
R
TEST CONDITION
= V
amb
Fast Avalanche Sinterglass Diode
V
25
2.5
RRM
l
R
I
R
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
= 1 A
, T
amb
RRM
30
3.0
j
= 150 °C
R
= 25 °C, unless otherwise specified)
= 0.25 A
PART
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature (°C)
SYMBOL
16346
16347
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1000
100
2.5
2.0
1.5
1.0
0.5
V
t
10
I
I
R
R
rr
0
F
1
25
0
V
PCB: d = 25 mm
R
R
20
thJA
T
= V
amb
50
T
j
= 100 K/W
RRM
MIN.
40
- Junction Temperature (°C)
- Ambient Temperature (°C)
-
-
-
-
60
75
80 100 120 140 160 180
100
TYP.
0.95
60
1
-
R
thJA
125
I = 10 mm
Document Number: 86048
half sinewave
= 45 K/W
V
R
= V
MAX.
150
150
200
1.1
Rev. 1.7, 30-Jul-10
RRM
5
175
UNIT
μA
μA
ns
V