ES2A-E3/52T Vishay, ES2A-E3/52T Datasheet
ES2A-E3/52T
Specifications of ES2A-E3/52T
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ES2A-E3/52T Summary of contents
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... RMS 110 ° F(AV) I FSM STG = 25 °C unless otherwise noted) A TEST CONDITIONS SYMBOL ° 100 °C A ES2A thru ES2D Vishay General Semiconductor in high frequency rectification ES2B ES2C ES2D 100 150 200 70 105 140 100 150 200 2 150 ES2A ES2B ES2C ES2D ...
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... ES2A thru ES2D Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Max. reverse recovery time Maximum reverse recovery time dI/ A/µ 2 Maximum stored charge dI/ A/µ Typical junction capacitance 4 MHz Note: (1) Pulse test: 300 ms pulse width duty cycle THERMAL CHARACTERISTICS (T PARAMETER ...
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... MIN. (2.18 MIN.) 0.180 (4.57) 0.160 (4.06) 0.060 MIN. (1.52 MIN.) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) ES2A thru ES2D Vishay General Semiconductor ° 1.0 MHz mVp-p sig 1 10 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Mounting Pad Layout 0 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...