SD453N16S20PC Vishay, SD453N16S20PC Datasheet - Page 8

• Manufacturer Part Number: SD453N16S20PC
• Description: FAST RECOVERY DIODE, 400A 1.6KV B-8
• Manufacturer: Vishay

Specifications of SD453N16S20PC

• Repetitive Reverse Voltage Vrrm Max: 1.6V
• Forward Current If(av): 400A
• Forward Voltage Vf Max: 2.2V
• Reverse Recovery Time Trr Max: 2µs
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 2.2V @ 1500A
• Voltage - Dc Reverse (vr) (max): 1600V (1.6kV)
• Current - Average Rectified (io): 400A
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Chassis, Stud Mount
• Package / Case: B-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
• Other names: *SD453N16S20PC

Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
SD453N/R Series
Bulletin I2076 rev. A 09/94
8
Fig. 21 - Recovery Time Characteristics
5.5
4.5
3.5
2.5
Fig. 18 - Recovery Time Characteristics
6.5
5.5
4.5
3.5
2.5
Fig. 24 - Maximum Total Energy Loss Per Pulse Characteristics
1E4
1E3
1E2
6
5
4
3
2
7
6
5
4
3
2
10
10
1E1
SD453N/R..S30 Series
T = 150 °C, V > 100V
SD453N/R..S20 Series
T = 150 °C; V > 100V
J
J
I
Sine Pulse
FM
100
100
0.4
tp
= 1000 A
I
Sine Pulse
1E2
FM
0.2
Pulse Basewidth (µs)
0.6
500 A
150 A
= 1000 A
0.1
r
r
1
500 A
150 A
SD453N/R..S20 Series
Sinusoidal Pulse
T = 150°C, V
dv/dt = 1000V/µs
J
2
1000
1000
4
6
RRM
1E3
10 joules per pulse
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
= 800V
Fig. 22 - Recovery Charge Characteristics
1200
1000
Fig. 19 - Recovery Charge Characteristics
800
700
600
500
400
300
200
100
800
600
400
200
0
0
0
0
50 100 150 200 250 300
50 100 150 200 250 300
1E4
SD453N/R..S20 Series
T = 150 °C; V > 100V
SD453N/R..S30 Series
T = 150 °C; V > 100V
J
J
I
Sine Pulse
I
Sine Pulse
FM
FM
= 1000 A
= 1000 A
1E4
1E3
1E2
500 A
150 A
500 A
150 A
r
r
1E1
10000
6000
4000
Fig. 25 - Frequency Characteristics
3000
2000
1500
Rate Of Fall Of F orward Current - di/dt (A/µs)
Rate Of Fall Of Forward Current - di/dt (A/µs)
Fig. 23 - Recovery Current Characteristics
Fig. 20 - Recovery Current Characteristics
1E2
550
500
450
400
350
300
250
200
150
100
Pulse Basewidth (µs)
450
400
350
300
250
200
150
100
50
50
1000
0
0
0
0
tp
600
50 100 150 200 250 300
50 100 150 200 250 300
SD453N/R..S30 Series
T = 150 °C; V > 100V
I
Sine Pulse
150 A
SD453N/R..S20 Series
T = 150 °C; V > 100V
150 A
400
FM
I
Sine Pulse
dv/dt = 1000V/us
J
SD453N/R..S20 Series
Sinusoidal Pulse
T = 70°C, V
J
FM
C
500 A
= 1000 A
500 A
1E3
= 1000 A
200
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RRM
100
r
r
= 800V
50 Hz
1E4