SD453N25S20PC Vishay, SD453N25S20PC Datasheet - Page 7
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SD453N25S20PC
Manufacturer Part Number
SD453N25S20PC
Description
FAST RECOVERY DIODE, 400A 2.5KV B-8
Manufacturer
Vishay
Specifications of SD453N25S20PC
Repetitive Reverse Voltage Vrrm Max
2.5kV
Forward Current If(av)
400A
Forward Voltage Vf Max
2.2V
Reverse Recovery Time Trr Max
2µs
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
2.2V @ 1500A
Voltage - Dc Reverse (vr) (max)
2500V (2.5kV)
Current - Average Rectified (io)
400A
Current - Reverse Leakage @ Vr
50mA @ 2500V
Speed
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)
2µs
Mounting Type
Chassis, Stud Mount
Package / Case
B-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*SD453N25S20PC
Document Number: 93176
Revision: 08-Apr-08
1E4
1E3
1E2
1E1
Rate Of F a ll Of Forwa rd Current - d i/ dt (A/ µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 22 - Recovery Charge Characteristics
Fig. 23 - Recovery Current Characteristics
1200
1000
550
500
450
400
350
300
250
200
150
100
800
600
400
200
50
Fig. 24 - Maximum Total Energy Loss
0
0
0
0
Per Pulse Characteristics
0.4
50 100 150 200 250 300
tp
50 100 150 200 250 300
1E2
Pulse Basewidth (µs)
0.2
0.6
S D453N/ R ..S 30 S eries
T = 150 °C; V > 100V
S D453N/ R..S 30 S eries
T = 150 °C; V > 100V
150 A
I
S ine Pulse
J
J
0.1
FM
1
T = 150°C, V
S D453N/ R..S 20 S eries
S inusoidal Pulse
dv/ dt = 1000V/ µs
500 A
J
= 1000 A
I
S ine Pulse
2
FM
= 1000 A
4
500 A
150 A
6
For technical questions, contact: ind-modules@vishay.com
r
r
RRM
1E3
10 joules per p ulse
= 800V
(Stud Version), 400/450 A
Fast Recovery Diodes
1E4
1E4
1E3
1E2
1E4
1E3
1E2
1E4
1E3
1E2
1E1
1E1
1E1
10000
tp
6000
Vishay High Power Products
0.4
6000
Fig. 26 - Maximum Total Energy Loss
4000
Fig. 27 - Frequency Characteristics
4000
Fig. 25 - Frequency Characteristics
3000
3000
0.6
2000
2000
S D453N/ R..S 20 S eries
T rapezoidal Pulse
T = 150°C, V
dv/ dt = 1000V/ µs; d i/ dt = 300A/ µs
1500
J
Per Pulse Characteristics
1500
0.8
1E2
1E2
1E2
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Pulse Basewidth (µs)
1000
1000
1
SD453N/R Series
2
tp
RRM
600
600
4
= 800V
6
400
400
dv/ d t = 1000V/ us
S D453N/R..S 20 S eries
S inusoidal Pulse
T = 70°C, V
10 joules per pulse
C
S D453N/R..S 20 S eries
T ra pezoidal Pulse
T = 70°C, V
d v/ dt = 1000V/us,
d i/ dt = 300A/ us
1E3
1E3
C
1E3
200
200
RRM
100
www.vishay.com
100
RRM
= 800V
tp
= 800V
50 Hz
50 Hz
1E4
1E4
1E4
7