SF1200-TR-E3 Vishay, SF1200-TR-E3 Datasheet - Page 2

• Manufacturer Part Number: SF1200-TR-E3
• Description: AVALANCHE DIODE, 1A, 1.2KV, SOD-57
• Manufacturer: Vishay

Specifications of SF1200-TR-E3

• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 3.4V
• Reverse Recovery Time Trr Max: 75ns
• Forward Surge Current Ifsm Max: 30A
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 86059
Rev. 1.7, 04-Aug-10
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
15789
16463
Fig. 1 - Forward Current vs. Forward Voltage
0.01
0.001
100
0.1
10
1.0
0.8
0.6
0.4
0.2
0.0
1
0
0
T
20 40 60 80 100 120 140 160 180
j
R
= 175 °C
1
PCB: d = 25 mm
thJA
T
amb
2
V
= 100 K/W
– Ambient Temperature(°C )
F
[e-mail], [e-mail],
– Forward Voltage ( V )
3
T
For technical questions within your region, please contact one of the following:
j
= 25 °C
4
I
5
F
= 0.5 A, I
V
R
half sinewave
V
6
R
thJA =
TEST CONDITION
R
l = 10 mm
= V
amb
= V
Ultra-Fast Avalanche Sinterglass
7
l
V
R
RRM
45 K/W
R
R
RRM
I
= 100 μA
F
= 25 °C, unless otherwise specified)
= 1 A, i
= V
8
= 1 A
, T
amb
RRM
j
= 125 °C
9
R
= 25 °C, unless otherwise specified)
= 0.25 A
Diode
SF1200
SF1600
PART
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
16464
16465
Fig. 3 - Reverse Current vs. Junction Temperature
SYMBOL
1000
[e-mail]
V
V
100
700
600
500
400
300
200
100
(BR)R
(BR)R
10
V
I
I
t
1
0
R
R
rr
F
25
25
V
R
50
50
= V
T
T
MIN.
1250
1650
j
j
– Junction Temperature (°C )
– Junction Temperature (°C )
-
-
-
-
RRM
Vishay Semiconductors
75
75
at 80 % V
P
SF1200, SF1600
100
100
R
TYP.
–Limit
at 10 0 % V
-
-
-
-
-
-
P
125
125
R
R
–Limit
V
R
= V
150
150
R
MAX.
3.4
50
75
RRM
5
-
-
www.vishay.com
175
175
UNIT
μA
μA
ns
V
V
V
85