1N6642D2A SEMELAB, 1N6642D2A Datasheet
1N6642D2A
Specifications of 1N6642D2A
Related parts for 1N6642D2A
1N6642D2A Summary of contents
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... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B Low Leakage Fast Switching Low Forward Voltage Hermetic Ceramic Package Designed as a Drop-In Replacement for “D-5A”/”B-MELF” Package. Suitable for general purpose, switching applications. Space Level and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS ...
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... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B ELECTRICAL CHARACTERISTICS Symbols Parameters V BR Breakdown Voltage ( Forward Voltage I R Reverse Current DYNAMIC CHARACTERISTICS C Capacitance t rr Reverse Recovery Time Notes Notes Notes Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Semelab Limited Semelab Limited ...
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... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B MECHANICAL DATA DLCC2/ D-5A MELF OVERLAY * The additional contact provides a connection to the lid in the application. Connecting the metal lid to a known electrical potential stops deep dielectric discharge in space applications; see the Space Weather link to be specified at order. ...
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... SILICON EPITAXIAL PLANAR DIODE 1N6642D2A / 1N6642D2B SCREENING OPTIONS Space Level (JQRS/ESA) and High Reliability options are available in accordance with the Screening Options Handbook available for download from the from the TT electronics Semelab web site. ESA Quality Level Products are based on the testing procedures specified in the generic ESCC 5000 and in the corresponding part detail specifications ...