BZT03C10-TR Vishay, BZT03C10-TR Datasheet

Diode

BZT03C10-TR

Manufacturer Part Number
BZT03C10-TR
Description
Diode
Manufacturer
Vishay
Datasheet

Specifications of BZT03C10-TR

Diode Type
Zener
Length/height, External
4.57mm
Vz Test Current, Izt
50mA
Test Current
50mA
Power (ptot)
3.25W
Zener Voltage, V(z)
10V
Package / Case
SOD-57
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZT03C10-TR
Manufacturer:
PANA
Quantity:
3 112
Silicon Zener-Diodes with Surge Current Specification
Features
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
T
Thermal Characteristics
T
Electrical Characteristics
T
Document Number 85599
Rev. 4, 10-Sep-03
VISHAY
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Junction ambient
Forward voltage
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
l = 10 mm, T
on PC board with spacing 25 mm
l = 10 mm, T
T
t
I
p
F
amb
L
= 100 µs, T
= 0.5 A
= constant
Test condition
= 25 °C
Test condition
Test condition
L
j
= 25 °C
= 25 °C
Symbol
V
Symbol
P
F
P
Symbol
T
P
P
ZRM
ZSM
R
R
T
stg
V
V
j
thJA
thJA
Min
- 65 to + 175
Vishay Semiconductors
BZT03..Series
Value
Value
3.25
Typ.
600
175
100
1.3
10
46
Max
1.2
949539
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
Unit
V
1

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BZT03C10-TR Summary of contents

Page 1

... Rev. 4, 10-Sep-03 Test condition Symbol = 25 ° ZRM = 25 ° ZSM stg Symbol R thJA R thJA Test condition Symbol V F BZT03..Series Vishay Semiconductors 949539 Value Unit 3. 600 W 175 ° 175 °C Value Unit 46 K/W 100 K/W Min Typ. Max 1.2 www.vishay.com Unit V ...

Page 2

... BZT03C47 BZT03C51 BZT03C56 BZT03C62 BZT03C68 BZT03C75 BZT03C82 BZT03C91 BZT03C100 94 100 106 BZT03C110 104 110 116 BZT03C120 114 120 127 BZT03C130 124 130 141 BZT03C150 138 150 156 BZT03C160 153 160 171 BZT03C180 168 180 191 BZT03C200 188 200 212 BZT03C220 208 ...

Page 3

... BZT03..Series Vishay Semiconductors Reverse Clamping Stand-off Leakage Current (CL RMS µA µ max max max 1500 4.4 9.5 34 ...

Page 4

... BZT03..Series Vishay Semiconductors Typical Characteristics ( Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, ≤100 K/W R thJA 4 l l=10mm 3 15mm T =constant L 2 20mm 1 see Fig 120 160 T – Ambient T emperature ( ° 9584 amb Figure 2. Total Power Dissipation vs. Ambient Temperature Package Dimensions in mm ...

Page 5

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

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