BZT03C47-TR Vishay, BZT03C47-TR Datasheet

DIODE, ZENER, 47V, 3.25W

BZT03C47-TR

Manufacturer Part Number
BZT03C47-TR
Description
DIODE, ZENER, 47V, 3.25W
Manufacturer
Vishay
Datasheet

Specifications of BZT03C47-TR

Zener Voltage Vz Typ
47V
Power Dissipation Max
1.3W
Diode Case Style
SOD-57
No. Of Pins
2
Device Marking
BZT03-C47
Diode Type
Zener
External Diameter
3.81mm
External Length / Height
4.57mm
Forward
RoHS Compliant
Forward Current If Max
500mA
Rohs Compliant
Yes
Zener Voltage
47 V
Voltage Tolerance
6 %
Voltage Temperature Coefficient
0.095 % / K
Power Dissipation
1.3 W
Maximum Reverse Leakage Current
1 uA
Maximum Zener Impedance
45 Ohms
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOD-57
Minimum Operating Temperature
- 65 C
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZT03C47-TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
Silicon Zener-Diodes with Surge Current Specification
Features
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
T
Thermal Characteristics
T
Electrical Characteristics
T
Document Number 85599
Rev. 4, 10-Sep-03
VISHAY
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Junction ambient
Forward voltage
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
l = 10 mm, T
on PC board with spacing 25 mm
l = 10 mm, T
T
t
I
p
F
amb
L
= 100 µs, T
= 0.5 A
= constant
Test condition
= 25 °C
Test condition
Test condition
L
j
= 25 °C
= 25 °C
Symbol
V
Symbol
P
F
P
Symbol
T
P
P
ZRM
ZSM
R
R
T
stg
V
V
j
thJA
thJA
Min
- 65 to + 175
Vishay Semiconductors
BZT03..Series
Value
Value
3.25
Typ.
600
175
100
1.3
10
46
Max
1.2
949539
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
Unit
V
1

Related parts for BZT03C47-TR

BZT03C47-TR Summary of contents

Page 1

... Rev. 4, 10-Sep-03 Test condition Symbol = 25 ° ZRM = 25 ° ZSM stg Symbol R thJA R thJA Test condition Symbol V F BZT03..Series Vishay Semiconductors 949539 Value Unit 3. 600 W 175 ° 175 °C Value Unit 46 K/W 100 K/W Min Typ. Max 1.2 www.vishay.com Unit V ...

Page 2

... BZT03C18 16.8 18 19.1 BZT03C20 18.8 20 21.2 BZT03C22 20.8 22 23.3 BZT03C24 22.8 24 25.6 BZT03C27 25.1 27 28.9 BZT03C30 BZT03C33 BZT03C36 BZT03C39 BZT03C43 BZT03C47 BZT03C51 BZT03C56 BZT03C62 BZT03C68 BZT03C75 BZT03C82 BZT03C91 BZT03C100 94 100 106 BZT03C110 104 110 116 BZT03C120 114 120 127 ...

Page 3

... BZT03..Series Vishay Semiconductors Reverse Clamping Stand-off Leakage Current (CL RMS µA µ max max max 1500 4.4 9.5 34 ...

Page 4

... BZT03..Series Vishay Semiconductors Typical Characteristics ( Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, ≤100 K/W R thJA 4 l l=10mm 3 15mm T =constant L 2 20mm 1 see Fig 120 160 T – Ambient T emperature ( ° 9584 amb Figure 2. Total Power Dissipation vs. Ambient Temperature Package Dimensions in mm ...

Page 5

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

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