BZT55B13-GS08 Vishay, BZT55B13-GS08 Datasheet - Page 4

• Manufacturer Part Number: BZT55B13-GS08
• Description: DIODE, ZENER, 0.5W, 13V
• Manufacturer: Vishay

Specifications of BZT55B13-GS08

• Zener Voltage Vz Typ: 13V
• Power Dissipation Max: 500mW
• Diode Case Style: MiniMELF
• No. Of Pins: 2
• Svhc: No SVHC (18-Jun-2010)
• Termination Type: SMD
• Test Current: 5mA
• Package / Case: MiniMELF
• Zener Voltage: 13 V
• Voltage Tolerance: 2 %
• Voltage Temperature Coefficient: 0.07 % / K
• Power Dissipation: 500 mW
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Zener Impedance: 26 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BZT55-Series
Vishay Semiconductors
Typical Characteristics
T
www.vishay.com
4
amb
Figure 2. Typical Change of Working Voltage under Operating
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage vs. Junction
= 25 °C, unless otherwise specified
95 9602
95 9598
1000
95 9599
600
500
400
300
200
100
100
1.3
1.2
1.1
1.0
0.9
0.8
10
0
1
0
- 60
0
T
j
Conditions at T
T
= 25 °C
amb
V
40
Ztn
T
0
5
j
- Ambient Temperature (°C)
= V
- Junction Temperature (°C)
Temperature
Zt
/V
V
80
Z
Z
10
60
TK
(25 °C)
- Z-Voltage (V)
VZ
I
= 10 x 10
Z
amb
= 5 mA
120
120
15
=25°C
-4
/K
180
160
- 2 x 10
- 4 x 10
20
8 x 10
2 x 10
6 x 10
4 x 10
0
-4
-4
-4
-4
-4
-4
/K
/K
240
200
/K
/K
/K
/K
25
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
95 9605
Figure 6. Forward Current vs. Forward Voltage
0.001
95 9601
0.01
100
Figure 5. Diode Capacitance vs. Z-Voltage
95 9600
0.1
200
150
100
- 5
10
15
10
50
5
0
0
1
0
0
0
10
0.2
5
V
T
F
V
j
- Forward Voltage (V)
V
= 25 °C
Z
Z
- Z-Voltage (V)
20
10
0.4
- Z-Voltage (V)
I
Z
= 5 mA
0.6
15
30
T
V
Document Number 85637
j
R
= 25 °C
= 2 V
40
20
0.8
Rev. 1.5, 10-Mar-06
1.0
50
25