BZM55B10-TR Vishay, BZM55B10-TR Datasheet - Page 4

• Manufacturer Part Number: BZM55B10-TR
• Description: ZENER DIODE, 500mW, 10V, MICROMELF
• Manufacturer: Vishay

Specifications of BZM55B10-TR

• Zener Voltage Vz Typ: 10V
• Power Dissipation Pd: 500mW
• Diode Case Style: MicroMELF
• No. Of Pins: 2
• Diode Type: Zener
• Peak Reflow Compatible (260 C): Yes
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BZM55-Series
Vishay Semiconductors
Typical Characteristics
T
www.vishay.com
4
amb
Figure 2. Typical Change of Working Voltage under Operating
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Temperature Coefficient of Vz vs. Z-Voltage
= 25 °C, unless otherwise specified
95 9600
95 9602
95 9598
1000
100
600
500
400
300
200
100
10
- 5
15
10
1
5
0
0
0
0
0
T
T
j
Conditions at T
= 25 °C
amb
40
10
5
- Ambient Temperature (°C)
V
[e-mail], [e-mail],
V
Z
Z
- Z-Voltage (V)
For technical questions within your region, please contact one of the following:
- Z-Voltage (V)
80
10
20
I
Z
I
= 5 mA
Z
amb
= 5 mA
120
30
15
=25°C
160
40
20
200
25
50
95 9605
95 9601
95 9599
Figure 5. Typical Change of Working Voltage vs.
0.001
Figure 6. Forward Current vs. Forward Voltage
0.01
200
150
100
100
0.1
Figure 4. Diode Capacitance vs. Z-Voltage
1.3
1.2
1.1
1.0
0.9
0.8
10
50
1
0
[e-mail]
- 60
0
0
V
T
Ztn
j
- Junction Temperature (°C)
0.2
V
= V
Junction Temperature
0
5
F
- Forward Voltage (V)
V
Zt
T
/V
Z
j
= 25 °C
- Z-Voltage (V)
Z
10
0.4
60
(25 °C)
TK
VZ
= 10 x 10
120
0.6
15
T
V
-4
Document Number 85597
j
R
/K
= 25 °C
= 2 V
180
20
0.8
- 2 x 10
- 4 x 10
8 x 10
2 x 10
6 x 10
4 x 10
0
Rev. 2.0, 26-Aug-10
-4
-4
-4
-4
-4
-4
/K
/K
240
/K
/K
/K
/K
1.0
25