DE375-102N12A IXYS RF, DE375-102N12A Datasheet
Manufacturer Part Number
DE375-102N12A
Description
RF MOSFET, N CHANNEL, 1KV, DE-375
Specifications of DE375-102N12A
Drain Source Voltage Vds
1kV
Continuous Drain Current Id
12A
Power Dissipation Pd
940W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE-375
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
DE375-102N12A
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
P
P
R
R
Symbol
V
V
I
I
R
g
T
T
T
T
Weight
D25
DM
AR
GSS
DSS
fs
J
JM
stg
L
DSS
DGR
GS
GSM
AR
DC
DHS
DAMB
DSS
GS(th)
thJC
thJHS
DS(on)
N-Channel Enhancement Mode
Low Q
High dv/dt
Nanosecond Switching
50MHz Maximum Frequency
g
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
I
T
Derate 3.7W/°C above 25°C
T
Test Conditions
V
V
V
V
V
V
Pulse test, t
V
1.6mm (0.063 in) from case for 10 s
S
S
and R
J
J
c
c
c
c
c
c
j
GS
DS
GS
DS
GS
GS
DS
= 0
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C
I
= V
= 0.8 V
= 15 V, I
150°C, R
= 0 V, I
= ±20 V
= 0
= 15 V, I
DM
, di/dt
GS
, I
g
D
DSS
D
DC
D
D
= 3 ma
= 4 ma
G
, V
300 S, duty cycle d
= 0.5I
= 0.5I
T
T
= 0.2
1 00A/ s, V
J
J
DS
= 125°C
= 25°C
= 0
D25
D25
GS
, pulse test
= 1 M
DD
V
DSS
JM
,
2%
Characteristic Values
T
J
= 25°C unless otherwise specified
1000
min.
-55
-55
2.5
Maximum Ratings
typ.
175
300
11
3
>200
1000
1000
0.16
0.35
max.
+175
+175
±20
±30
940
425
±100
4.5
0.95
12
72
12
30
5.5
5
50
1
V/ns
V/ns
C/W
C/W
mA
mJ
nA
°C
°C
°C
°C
W
W
W
V
V
V
V
A
A
A
V
V
A
S
g
RF Power MOSFET
DE375-102N12A
GATE
Features
Advantages
SG1
Isolated Substrate
IXYS advanced low Q
Low gate charge and capacitances
Low R
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other haz-
ardous materials
Optimized for RF and high speed
switching at frequencies to 50MHz
Easy to mount—no insulators needed
High power density
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
easier to drive
faster switching
V
I
R
P
D25
SG2
DS(on)
DSS
DC
DS(on)
=
=
=
=
g
process
SD1
1000 V
0.95
940 W
SD2
12 A
DRAIN
Related parts for DE375-102N12A
DE375-102N12A Summary of contents
... DSS >200 940 425 4.5 0.16 0.35 Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 1000 2.5 5.5 ±100 0. -55 +175 175 -55 +175 300 3 DE375-102N12A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns V/ GATE W C/W SG1 SG2 C/W Features Isolated Substrate high isolation voltage (> ...
... Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 0.3 2000 , 150 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max 1.5 2% 200 0.6 7 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE375-102N12A RF Power MOSFET ...
... Vds in Volts 375-102N12A Capacitances vs Vds DE375-102N12A RF Power MOSFET Ciss Coss Crss 700 800 900 1000 ...
... D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS (Preliminary) of the device, Rds is the resistive leakage term. DE375-102N12A RF Power MOSFET are mod- RSS Doc #9200-0249 Rev 4 © 2003 IXYS RF ...
Related keywords
- DE375-102N12A datasheet
- DE375-102N12A data sheet
- DE375-102N12A pdf datasheet
- DE375-102N12A component
- DE375-102N12A part
- DE375-102N12A distributor
- DE375-102N12A RoHS
- DE375-102N12A datasheet download
