SKM 150GB123D SEMIKRON, SKM 150GB123D Datasheet - Page 5

• Manufacturer Part Number: SKM 150GB123D
• Description: IGBT MODULE, 1.2KV, 150A, SEMITRANS 3
• Manufacturer: SEMIKRON

Specifications of SKM 150GB123D

• Transistor Polarity: N Channel
• Dc Collector Current: 150A
• Collector Emitter Voltage Vces: 1.2kV
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM 150GB123D
5
Fig. 7 Typ. switching times vs. I
Fig. 9 Transient thermal impedance of IGBT
Z
Fig. 11 CAL diode forward characteristic
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
C
11-09-2006 RAA
Fig. 8 Typ. switching times vs. gate resistor R
Fig. 10 Transient thermal impedance of FWD
Z
Fig. 12 Typ. CAL diode peak reverse recovery current
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
G
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