2MBI300U4H-120-50 FUJI ELECTRIC, 2MBI300U4H-120-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI300U4H-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 300A, M234
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI300U4H-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 300A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 1.47kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100.0
800
600
400
200
10.0
800
600
400
200
1.0
0.1
0
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
VGE=0V, f=1MHz, Tj=25
Collector-Emitter voltage : VCE [ V ]
1
1
VGE=20V
VGE=15V / chip
10
Tj=25
2
2
Tj=25
o
C / chip
15V
o
C
3
3
Tj=125
20
12V
o
C
o
C
4
4
Cies
Coes
Cres
10V
8V
30
5
5
10
800
600
400
200
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
5
0
0
MS5F6037
Collector current vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [ V ]
400
1
10
Gate-Emitter voltage : VGE [ V ]
Vcc=600V, Ic=300A, Tj=25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=125
Tj=25
2
VGE=20V
800
15
o
o
C / chip
C / chip
3
15V
VGE
VCE
1200
20
o
C
H04-004-03a
Ic=600A
Ic=300A
Ic=150A
9
4
13
12V
10V
8V
1600
25
5