2MBI450U4J-120-50 FUJI ELECTRIC, 2MBI450U4J-120-50 Datasheet - Page 4

• Manufacturer Part Number: 2MBI450U4J-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M250
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4J-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3. Absolute Maximum Ratings ( at Tc= 25
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
(*3) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5)
(*4) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
(*5) Recommendable Value : PC-Board 0.4 to 0.6 Nm (M2.5)
4. Electrical characteristics ( at Tj= 25
(*6) Biggest internal terminal resistance among arm.
5. Thermal resistance characteristics
Thermal resistance(1device)
Contact Thermal resistance
(1 device) (*7)
(*7) This is the value which is defined mounting on the additional cooling fin with thermal compound.
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*6)
Resistance
B value
and shorted to base plate when isolation test will be done.
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting (*3)
Terminals (*4)
PC-Board (*5)
Items
Items
Items
ICES
IGES
VGE(th)
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(terminal)
VF
(chip)
trr
R lead
R
B
Rth(j-c)
Rth(c-f)
Symbols
Symbols
o
C unless otherwise specified )
VCE=1200V
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
Ic=450mA
Ic=450A
VGE=15V
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=450A
VGE=±15V
RG=1.1Ω
IF=450A
VGE=0V
IF=450A
T=25
T=100
T=25/50
IGBT
FWD
with Thermal Compound
o
C unless otherwise specified )
o
C
o
VCES
VGES
Ic
Icp
-Ic
-Ic pulse
Pc
Tj
Tstg
Viso
-
C
Conditions
Conditions
o
Symbols
C
Tj=25
Tj=125
Tj=25
Tj=125
Tj=25
Tj=125
Tj=25
Tj=125
Continuous
1ms
1ms
1 device
AC : 1min.
MS5F6858
o
o
o
o
C
C
C
C
o
o
o
o
C
C
C
C
Conditions
3305
min.
min.
4.5
465
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Tc=25
Tc=80
Tc=25
Tc=80
Characteristics
Characteristics
0.0167
5000
2.40
2.60
1.90
2.10
0.32
0.10
0.03
0.41
0.07
2.10
2.20
1.65
1.75
1.00
3375
o
o
o
o
495
typ.
typ.
6.5
50
C
C
C
C
-
-
-
-
-
-40 to +125
Maximum
Ratings
1200
1200
2080
+150
2500
±20
600
450
900
450
900
3.5
4.5
0.6
max.
1.20
0.60
1.00
0.30
max.
2.55
2.05
2.25
1.80
3450
600
0.35
0.06
0.10
3.0
8.5
520
-
-
-
-
-
-
-
-
-
H04-004-03a
4
15
Units
Units
Units
o
VAC
N m
mΩ
C/W
mA
nA
o
nF
us
us
W
V
V
A
V
V
V
Ω
K
C