2MBI75S-120 FUJI ELECTRIC, 2MBI75S-120 Datasheet
2MBI75S-120
Manufacturer Part Number
2MBI75S-120
Description
IGBT MODULE, 1200V, 75A
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI75S-120.pdf
(4 pages)
Specifications of 2MBI75S-120
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
600W
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case
RoHS Compliant
Power Dissipation Pd
600W
Rohs Compliant
Yes
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2MBI75S-120
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Part Number:
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I I I I Maximum Ratings and Characteristics
•
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
*
Screw Torque
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
•
Thermal Resistance
IGBT MODULE ( S-Series )
I I I I Features
• NPT-Technology
• Square SC SOA at 10 x I
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Low Losses And Soft Switching
I I I I Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
1
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Switching Loss
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
Items
Items
Continuous
1ms
Continuous
1ms
Items
A.C. 1min.
25°C / 80°C
25°C / 80°C
C
( at T
( T
Symbols
Symbols
j
=25°C )
2MBI 75S-120
I
I
V
V
C
C
C
t
t
t
t
t
V
t
c
R
R
R
CES
GES
ON
r,x
r,i
OFF
f
rr
=25°C
GE(th)
CE(sat)
F
ies
oes
res
th(c-f)
th(j-c)
th(j-c)
Terminals *
Mounting *
Symbols
-I
-I
)
P
T
V
V
I
I
T
V
C
C PULSE
C
C PULSE
j
stg
CES
GES
C
is
V
V
V
V
V
V
f=1MHz
V
I
V
R
Inductive Load
I
I
C
F
F
IGBT
Diode
With Thermal Compound
GE
CE
GE
GE
GE
CE
CC
GE
G
=75A; V
=75A
2
2
=0V V
=10V
=0V V
=20V I
=15V I
=0V
= 600V
=
= ±15V
=
-40 ∼ +125
75A
16Ω
100 / 75
200 / 150
Ratings
1200
+150
2500
GE
CE
GE
± 20
C
C
150
600
3.5
3.5
Test Conditions
=75mA
=75A
Test Conditions
75
=0V
=1200V
=± 20V
Units
I I I I Outline Drawing
Nm
°C
W
V
A
V
T
T
T
T
j
j
j
j
= 25°C
=125°C
= 25°C
=125°C
I I I I Equivalent Circuit
Min.
Min.
5.5
Typ.
9’000
1’875
1’650
0.35
0.25
0.10
0.45
0.08
Typ.
0.05
7.2
2.3
2.8
2.3
2.0
2-Pack IGBT
0.21
0.47
Max.
Max.
200
350
1.0
8.5
2.6
1.2
0.6
1.0
0.3
3.0
1200V
2x75A
Units
Units
°C/W
mA
nA
pF
µs
ns
V
V
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2MBI75S-120 Summary of contents
Page 1
IGBT MODULE ( S-Series ) Features • NPT-Technology • Square SC SOA • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft ...
Page 2
IGBT 1200V 2x75A ...
Page 3
IGBT 1200V 2x75A ...
Page 4
Specification is subject to change without notice 2-Pack IGBT 1200V 2x75A September 2000 ...