6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 6

• Manufacturer Part Number: 6MBI50S-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

11. List of material (材料リスト)
12. RoHS Directive Compliance (RoHS 指令適用について)
本IGBTモジュールは富士電機デバイステクノロジーが発行しているRoHSに関する資料MS5F6209を適用する。
日本語版(MS5F6212)は参考資料とする。
Module. The Japanese Edition(MS5F6212) is made into a reference grade.
The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT
No.
10 Solder (Under chip)
11
12 Label
13 FWD chip
14 Ring
1 Base Plate
2 Terminal
3 Cover
4 Case
5 Isolation substrate
6 IGBT chip
7 Wiring
8 Silicone Gel
9 Adhesive
(Under Isolation substrate )
Solder
Parts
Material (main)
Silicone resin
Silicone resin
Sn/Ag base
Sn/Ag base
Al
PPS resin
PPS resin
Aluminum
2
Silicon
Silicon
Paper
O
Cu
Cu
Fe
3
+ Cu
(Total weight of soldering material(typ): 5.2 g)
Ni plating
Ni plating (Internal)
Lead free solder plating (External)
UL 94V-0
UL 94V-0
(Not drawn in above)
(Not drawn in above)
(Not drawn in above)
Trivalent Chromate treatment
MS5F 6174
Ref.
H04-004-03a
6
14