7MBR100U2B-060-50 FUJI ELECTRIC, 7MBR100U2B-060-50 Datasheet - Page 3

• Manufacturer Part Number: 7MBR100U2B-060-50
• Description: IGBT, 7 PACK MOD, 600V, 100A, M712
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR100U2B-060-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2V
• Power Dissipation Max: 378W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
Characteristics (Representative)
100.00
10.00
250
200
150
100
250
200
150
100
1.00
0.10
50
50
0
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
1
VGE=0V, f= 1MHz, Tj= 25°C
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
VGE=20V 15V 12V
10
VGE=15V / chip
Tj= 25°C / chip
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
Cres
2
Coes
Tj=25°C
3
20
Cies
3
Tj=125°C
4
10
8V
30
5
4
500
400
300
200
100
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
250
200
150
100
10
Collector current vs. Collector-Emitter voltage (typ.)
50
8
6
4
2
0
0
0
5
0
0
Vcc=300V, Ic=100A, Tj= 25°C
100
Dynamic Gate charge (typ.)
Gate - Emitter voltage : VGE [ V ]
1
10
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
Tj= 125°C / chip
VGE
Tj=25°C / chip
200
[ Inverter ]
VGE=20V 15V 12V
2
VCE
[ Inverter ]
[ Inverter ]
15
300
7MBR100U2B060
3
400
20
Ic=200A
Ic=100A
Ic= 50A
4
500
10V
8V
25
20
15
10
5
0
25
5