7MBR35SB-140-50 FUJI ELECTRIC, 7MBR35SB-140-50 Datasheet - Page 4

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7MBR35SB-140-50

Manufacturer Part Number
7MBR35SB-140-50
Description
IGBT, 7 PACK MOD, 1400V, 35A, M712
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR35SB-140-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
35A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
1.4kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Module
1000
5000
1000
500
100
500
100
50
50
25
20
15
10
5
0
10
10
0
toff
ton
tr
tf
toff
ton
tr
tf
Vcc=800V, VGE=±15V, Rg= 33 ohm, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=800V, Ic=35A, VGE=±15V, Tj= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=800V, Ic=35A, VGE=±15V, Tj= 25°C
Switching loss vs. Gate resistance (typ.)
Gate resistance : Rg [ ohm ]
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
20
50
50
[ Inverter ]
[ Inverter ]
[ Inverter ]
100
100
40
Eon
Eoff
Err
500
500
60
1000
500
100
100
50
14
12
10
80
60
40
20
8
6
4
2
0
0
0
0
0
200
toff
ton
tr
tf
Vcc=800V, VGE=±15V, Rg= 33 ohm, Tj= 125°C
+VGE=15V, -VGE=<15V, Rg=>33 ohm, Tj=<125°C
Switching time vs. Collector current (typ.)
Switching loss vs. Collector current (typ.)
Collector - Emitter voltage : VCE [ V ]
Vcc=800V, VGE=±15V, Rg=33 ohm
400
Reverse bias safe operating area
Collector current : Ic [ A ]
Collector current : Ic [ A ]
20
20
600
[ Inverter ]
[ Inverter ]
[ Inverter ]
800
1000
40
40
7MBR35SB140
1200
Eon(125°C)
Eoff(25°C)
Err(25°C)
Eoff(125°C)
Err(125°C)
1400
Eon(25°C)
1600
60
60

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