7MBR75SB-060-50 FUJI ELECTRIC, 7MBR75SB-060-50 Datasheet - Page 3

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7MBR75SB-060-50

Manufacturer Part Number
7MBR75SB-060-50
Description
IGBT, 7 PACK MOD, 600V, 75A, M712
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR75SB-060-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
75A
Collector Emitter Voltage Vces
1.8V
Power Dissipation Max
300W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Modules
Characteristics (Representative)
30000
10000
1000
200
150
100
200
150
100
100
50
50
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
5
Collector current vs. Collector-Emitter voltage
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
1
VGE=0V, f= 1MHz, Tj= 25
10
VGE=15V (typ.)
Tj= 25
2
VGE= 20V
15
[ Inverter ]
[ Inverter ]
[ Inverter ]
o
2
C (typ.)
20
3
15V
Tj= 25
o
25
C
o
C
3
12V
4
Tj= 125
30
Cres
Cies
Coes
10V
o
C
35
5
4
200
150
100
500
400
300
200
100
50
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
100
1
Collector - Emitter voltage : VCE [ V ]
10
Gate - Emitter voltage : VGE [ V ]
Vcc=300V, Ic=75A, Tj= 25
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125
200
Tj= 25
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
o
15
o
C (typ.)
VGE= 20V
C (typ.)
300
3
7MBR75SB060
o
15V
C
20
Ic=150A
Ic= 75A
400
Ic= 37.5A
4
10V
12V
500
25
5
25
20
15
10
5
0

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