SKM600GA12E4 SEMIKRON, SKM600GA12E4 Datasheet
Manufacturer Part Number
SKM600GA12E4
Description
IGBT SINGLE MODULE 600A 1200V
Specifications of SKM600GA12E4
Module Configuration
Single
Dc Collector Current
600A
Collector Emitter Voltage Vces
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
SEMITRANS 4
No. Of Pins
5
Svhc
No SVHC
Family/system
SEMITRANS
Voltage (v)
1200
Current (a)
600
Chip-type
IGBT 4 (Trench)
Case
SEMITRANS 4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
SKM600GA12E4HD
SKM600GA12E4
IGBT4 Modules
SKM600GA12E4
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
• High short circuit capability, self
• Soft switching 4. Generation CAL
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
• Short circuit: Soft Turn-off
• With RG = 2 Ω the RBSOA is limited to
© by SEMIKRON
SEMITRANS
coefficient
limiting to 6 x I
diode (CAL4)
recommended RGoff > 20 Ω
1 x ICnom = 600 A
T
T
rel. results valid for T
c
op
= 125°C max, recomm.
= -40 ... +150°C, product
CNOM
GA
®
j
= 150°
4
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 2 – 16.06.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
V
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 600 A
= 25 °C
= 600 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= ±15 V
= 3xI
= 3xI
≤ 1200 V
= 2 Ω
= 2 Ω
= 6000 A/µs
= 5200 A/µs
CE
, I
Fnom
Cnom
C
= 24 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1800
1800
3240
4000
3400
typ.
37.2
2.32
2.04
916
704
600
707
529
600
500
195
690
130
1.8
2.2
0.8
0.7
1.7
2.5
5.8
0.1
1.3
10
90
74
84
0.049
max.
2.05
2.4
0.9
0.8
1.9
2.7
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SKM600GA12E4
SKM600GA12E4 Summary of contents
... SKM600GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM600GA12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
... SKM600GA12E4 ® SEMITRANS 4 IGBT4 Modules SKM600GA12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives • UPS • Electronic welders at fsw kHz Remarks • ...
... SKM600GA12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 16.06.2009 = ...
... SKM600GA12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: CAL diode forward characteristic Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 2 – 16.06.2009 G © by SEMIKRON ...
... SKM600GA12E4 Semitrans 4 GA This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 16.06.2009 5 ...
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