SKM600GB126D SEMIKRON, SKM600GB126D Datasheet - Page 2

• Manufacturer Part Number: SKM600GB126D
• Description: IGBT MODULE, 1.2KV, 660A, SEMITRANS 3
• Manufacturer: SEMIKRON

Specifications of SKM600GB126D

• Transistor Polarity: N Channel
• Dc Collector Current: 660A
• Collector Emitter Voltage Vces: 2.15V
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Thermal Resistance: 0.055°C/W
• Collector Emitter Saturation Voltage Vce(sat): 1.7V
• Rohs Compliant: Yes
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 400
• Chip-type: IGBT 3 (Trench)
• Case: SEMITRANS 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM 600GB126D ...
Trench IGBT Module
SKM 600GB126D
SKM 600GAL126D
Features
Typical Applications*
Remarks
2
SEMITRANS
GB
GAL
®
3
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
* The specifications of our components may not be considered as an assurance of
component characteristics. Components have to be tested for the respective
application. Adjustments may be necessary. The use of SEMIKRON products in
life support appliances and systems is subject to prior specification and written
approval by SEMIKRON. We therefore strongly recommend prior consultation of
our personal.
Characteristics
Symbol
Inverse diode
Freewheeling Diode
Module
06-10-2009 NOS
Conditions
min.
typ.
© by SEMIKRON
max.
Units