GA035XCP12-247 GeneSiC Semiconductor, GA035XCP12-247 Datasheet - Page 2

IGBT SIC DIODE COPACK, 1200V, 35A, TO-247

GA035XCP12-247

Manufacturer Part Number
GA035XCP12-247
Description
IGBT SIC DIODE COPACK, 1200V, 35A, TO-247
Manufacturer
GeneSiC Semiconductor
Datasheet

Specifications of GA035XCP12-247

Transistor Type
IGBT
Dc Collector Current
35A
Collector Emitter Voltage Vces
1200V
Operating Temperature Range
-40°C To +150°C
No. Of Pins
3
Package / Case
3-TO-247
Rohs Compliant
Yes
January 2011
Electrical Characteristics
IGBT
Gate Threshold Voltage
Collector-Emitter Leakage Current
Gate-Leakage Current
Collector-Emitter Threshold Voltage
Collector-Emitter Slope Resistance
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Reverse Bias Safe Operating Area
Short Circuit Current
Short Circuit Duration
Rise Time
Fall Time
Turn On Delay Time
Turn Off Delay Time
Turn-On Energy Loss Per Pulse
Turn-Off Energy Loss Per Pulse
Free-wheeling diode
Forward Voltage
Threshold Voltage at Diode
Peak Reverse Recovery Current
Reverse Recovery Time
Diode peak rate of fall of reverse recovery current
during tb
Figure 1: Typical Output Characteristics at 25
Parameter
o
C
Symbol
RBSOA
V
I
V
R
V
I
R
V
dI
CES,150
CES,25
CE(SAT)
C
t
t
I
C
C
CE(TO)
E
E
CE,150
Q
I
GE(th)
d(on)
d(off)
V
GES
CE,25
I
t
D(TO)
rrm
t
rr
t
t
sc
sc
oes
res
rr
ies
r
f
on
off
/dt
G
F
Preliminary Datasheet
http://www.genesicsemi.com
T
I
I
j
=125 ºC, R
C
F
= 35 A, V
= 35 A, V
V
V
V
V
V
V
GE
GE
-dI
I
GE
CE
GE
CC
F
V
= 0 V, V
= V
= 35 A, V
= 800 V, I
V
F
= 0 V, V
= 0 V, V
V
= 0 V, V
R
T
CC
/dt = 300 A/ s, T
V
GE(0n)
CC
V
j
gon
= 125 ºC, R
GE
= 800 V, I
CE
GE
GE
GE
g
= 900 V, V
=56 , V
= R
, I
= 15 V, T
= 15 V, T
= 15 V, V
Conditions
= 15 V, T
= 0 V, T
Figure 2: Typical Output Characteristics at 150
C
T
T
CE
= 0.6 mA, T
T
CE
CE
GE
goff
j
j
= 125 ºC
GE
= 25 ºC
j
C
= 25ºC
= V
= V
= 25 V, f = 1 MHz
= 20 V, T
= 35 A, V
= 22 ,
= 0 V, V
C
CC
CES
= 35 A,
j
CES
j
g
GE
=1200 V, V
= 25 ºC (150 ºC )
j
= 150 ºC
GE(0ff)
j
= 56 ,
= 25 ºC
= 25 ºC(150 ºC)
, T
= ±15 V
, T
j
= 125 ºC
j
= -8 V,
j
= 150 ºC
R
j
= 25 ºC
j
GE
= 25 ºC
= 25 ºC
= 650 V
= 15V
GE
=15 V
min.
GA35XCP12-247
5.5
3.0(3.9)
2.6(3.5)
Values
0.02
87.5
2.66
4.35
3.01
typ.
205
232
190
0.3
1.1
tbd
tbd
tbd
0.8
50
50
45
60
85
40
36
6
o
max.
C
500
6.5
0.2
10
Page 2 of 5
Unit
A/ s
m
m
mA
mA
nA
nC
mJ
mJ
nF
nF
nF
ns
ns
ns
ns
ns
A
V
V
V
A
V
V
A
s

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