GA100XCP12-227 GeneSiC Semiconductor, GA100XCP12-227 Datasheet - Page 4
![IGBT SIC DIODE COPACK, 1200V, 100A, SOT-227](/photos/22/16/221681/20t5182-30_sml.jpg)
GA100XCP12-227
Manufacturer Part Number
GA100XCP12-227
Description
IGBT SIC DIODE COPACK, 1200V, 100A, SOT-227
Manufacturer
GeneSiC Semiconductor
Datasheet
1.GA100XCP12-227.pdf
(5 pages)
Specifications of GA100XCP12-227
Transistor Type
IGBT
Dc Collector Current
100A
Collector Emitter Voltage Vces
1200V
Operating Temperature Range
-40°C To +150°C
No. Of Pins
3
Package / Case
3-SOT-227
Product
IGBT Silicon Modules
Rohs Compliant
Yes
Lead Free Status / Rohs Status
Details
GA100XCP12-227
Figure 9: Typical Reverse Recovery Currents and Times
Package Dimensions:
SOT-227
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Preliminary Datasheet
January 2011
Page 4 of 5
http://www.genesicsemi.com