CM600HU-24F Powerex Inc, CM600HU-24F Datasheet - Page 3

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CM600HU-24F

Manufacturer Part Number
CM600HU-24F
Description
IGBT Module
Manufacturer
Powerex Inc
Series
IGBTMOD™r
Datasheet

Specifications of CM600HU-24F

Power Dissipation Pd
2.4kW
Collector Emitter Voltage V(br)ceo
1.2kV
Continuous Collector Current Ic
600A
Collector Emitter Saturation Voltage Vce(sat)
2.4V
Current Rating
600A
Leaded Process Compatible
Yes
Igbt Type
Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 600A
Current - Collector (ic) (max)
600A
Current - Collector Cutoff (max)
2mA
Input Capacitance (cies) @ Vce
230nF @ 10V
Power - Max
2400W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Module
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CM600HU-24F
Manufacturer:
MITSUBISHI/三菱
Quantity:
20 000
Part Number:
CM600HU-24F
Quantity:
55
Part Number:
CM600HU-24F#300G
Manufacturer:
IXYS
Quantity:
1 000
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM600HU-24F
Trench Gate Design Single IGBTMOD™
600 Amperes/1200 Volts
Dynamic Electrical Characteristics, T
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
R
R
R
Symbol
Symbol
R
th(j-c)
t
t
th(j-c)
th(j-c)
C
C
C
d(on)
d(off)
th(c-f)
Q
j
t
oes
res
t
t
ies
rr
= 25 C unless otherwise specified
r
f
rr
'Q
Q
D
j
= 25 C unless otherwise specified
Per Module, Thermal Grease Applied
T
c
Point per Outline Drawing
Point per Outline Drawing
Reference Point Under Chip
Per FWDi, T
V
Per IGBT, T
V
CC
V
Switching Operation
CE
GE1
= 600V, I
Inductive Load
Test Conditions
= 10V, V
R
I
Test Conditions
Per IGBT,
G
E
= V
= 600A
= 1.0 ,
GE2
c
c
Reference
C
Reference
GE
= 15V,
= 600A,
= 0V
Min.
Min.
43.2
Typ.
Typ.
0.03
0.015
230
300
150
800
300
500
10
Max.
Max.
6
0.063
0.075
Units
Units
C/W
C/W
C/W
C/W
ns
ns
ns
ns
ns
nf
nf
nf
C
3

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