2N4857A Vishay, 2N4857A Datasheet - Page 3

• Manufacturer Part Number: 2N4857A
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N4857A

• Breakdown Voltage Vbr: -40V
• Gate-source Cutoff Voltage Vgs(off) Max: -6V
• Continuous Drain Current Id: 20mA
• Gate-source Breakdown Voltage: -40V
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: 20mA
• Current Rating: 50mA
• Gate-source Cutoff Voltage: -6V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 70243
S-04028—Rev. D, 04-Jun-01
100
200
160
120
80
60
40
20
80
40
30
24
18
12
6
0
0
0
–55
0
0
I
r
–35
D
DS
t
V
d(off)
= 1 mA
DG
t
changes X 0.7%/_C
d(off)
On-Resistance and Drain Current
V
On-Resistance vs. Temperature
vs. Gate-Source Cutoff Voltage
GS(off)
–2
= 5 V, V
2
independent of device V
–15
V
GS(off)
I
– Gate-Source Cutoff Voltage (V)
DSS
r
r
DS
Turn-Off Switching
I
DS
T
D
GS(L)
5
A
= –8 V
V
– Drain Current (mA)
@ V
@ I
– Temperature (_C)
GS(off)
t
–4
f
4
= –10 V
D
DS
25
= 1 mA, V
= –2 V
= 20 V, V
45
V
–6
6
GS(off)
GS(off)
GS
–4 V
GS
65
I
= 0
DSS
= 0
= –2 V
85
–8
–8 V
8
105
–10
125
10
_
200
160
120
80
40
0
100
80
60
40
20
30
24
18
12
0
5
4
3
2
1
0
6
0
0
1
0
V
I
T
Capacitance vs. Gate-Source Voltage
D
t
GS(off)
A
d(on)
f = 1 MHz
= 3 mA
V
On-Resistance vs. Drain Current
= 25_C
GS(off)
2N4856A/4857A/4858A
–2
–4
@
= –2 V
V
–4 V
–8 V
t
t
V
V
r
GS
r
– Gate-Source Cutoff Voltage (V)
DG
GS(L)
approximately independent of I
I
Turn-On Switching
D
– Gate-Source Voltage (V)
= 5 V, R
– Drain Current (mA)
= –10 V
–4
–8
I
D
t
d(on)
G
10
= 12 mA
= 50 W
Vishay Siliconix
C
@
iss
–12
–6
C
@ V
rss
@ V
DS
= 0 V
DS
–16
–8
D
= 0 V
www.vishay.com
100
–10
–20
7-3