2N5116-E3 Vishay, 2N5116-E3 Datasheet - Page 3
![P CHANNEL JFET, 45V, TO-206AA](/photos/22/14/221408/4472333_sml.jpg)
2N5116-E3
Manufacturer Part Number
2N5116-E3
Description
P CHANNEL JFET, 45V, TO-206AA
Manufacturer
Vishay
Specifications of 2N5116-E3
Breakdown Voltage Vbr
45V
Gate-source Cutoff Voltage Vgs(off) Max
4V
Power Dissipation Pd
500mW
Operating Temperature Range
-55°C To +200°C
No. Of Pins
3
Transistor Polarity
P Channel
Continuous Drain Current Id
-25mA
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document Number: 70260
S-04030—Rev. E, 04-Jun-01
200
160
120
250
200
150
100
80
40
50
50
40
30
20
10
0
0
0
0
–1
0
t
V
ON
t
V
V
GS(off)
r
DD
GS(H)
approximately independent of I
T
@ I
A
On-Resistance and Drain Current
= –10 V, R
V
V
On-Resistance vs. Drain Current
= 25_C
vs. Gate-Source Cutoff Voltage
D
GS(off)
= 1.5 V
GS(off)
1
= 10 V, V
2
= –5 mA
r
DS
t
r
@ I
– Gate-Source Cutoff Voltage (V)
– Gate-Source Cutoff Voltage (V)
I
Turn-On Switching
r
I
D
DSS
DS
G
– Drain Current (mA)
D
GS(L)
= 220 W
= –5 mA
@ I
3 V
2
@ V
4
D
= 0 V
DS
= –1 mA, V
–10
= –15 V, V
t
ON
3
5 V
@ I
6
D
D
GS
= –10 mA
GS
= 0 V
I
DSS
= 0 V
4
8
–100
10
5
_
–100
–80
–60
–40
–20
0
300
240
180
120
Forward Transconductance and Output Conductance
18
15
12
60
20
16
12
8
4
0
9
6
3
0
–55
0
0
g
V
fs
GS
I
r
t
V
–35
D
d(off)
DS
and g
DD
= –1 mA
= 0 V, f = 1 kHz
changes X 0.7%/_C
V
V
On-Resistance vs. Temperature
= –10 V, V
vs. Gate-Source Cutoff Voltage
GS(off)
V
GS(off)
–3
g
–15
2
GS(off)
os
fs
@ V
– Gate-Source Cutoff Voltage (V)
= 1.5 V
Turn-Off Switching
I
= 1.5 V
T
D
g
DS
A
5
os
– Drain Current (mA)
GS(H)
– Temperature (_C)
5 V
= –15 V
–6
4
5 V
25
= 10 V, V
2N5114/5115/5116
t
f
V
45
GS(off)
3 V
Vishay Siliconix
GS(L)
–9
6
= 1.5 V
65
= 0 V
5 V
85
–12
8
105
www.vishay.com
–15
125
10
250
200
150
100
50
0
9-3