2N5116JANTX Vishay, 2N5116JANTX Datasheet
2N5116JANTX
Specifications of 2N5116JANTX
Related parts for 2N5116JANTX
2N5116JANTX Summary of contents
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... These JFETs are optimized for use in complementary switching applications with the Vishay Siliconix 2N4856A series. Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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... Vishay Siliconix _ Parameter Symbol Static Gate-Source V (BR)GSS Breakdown Voltage Gate-Source Cutoff Voltage V GS(off) b Saturation Drain Current I DSS Gate Reverse Current I GSS c Gate Operating Current I G Drain Cutoff Current I D(off) Drain-Source On-Voltage V DS(on) DS(on) Drain-Source r DS(on) On-Resistance Gate-Source V GS(F) Forward Voltage ...
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... Forward Transconductance and Output Conductance –100 18 I DSS –80 15 –60 12 –40 9 – 300 240 180 120 60 0 –100 – – 2N5114/5115/5116 Vishay Siliconix vs. Gate-Source Cutoff Voltage g and – kHz – Gate-Source Cutoff Voltage (V) GS(off) On-Resistance vs. Temperature I = – changes X 0.7%/ 1.5 V GS(off –35 – ...
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... Vishay Siliconix Output Characteristics – 1.5 V 0.5 V –1.6 1.0 V –1.2 –0.8 –0 –0.1 –0.2 –0.3 V – Drain-Source Voltage (V) DS Output Characteristics – GS(off) –20 –15 –10 – –4 –8 –12 V – Drain-Source Voltage (V) DS Capacitance vs. Gate-Source Voltage MHz iss 12 C rss ...
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... S-04030—Rev. E, 04-Jun-01 _ – – –32 –24 –16 –8 0.8 1.0 100 V = – 2N5116 – GS( 390 W V GS(L) – –5 V 2N5114/5115/5116 Vishay Siliconix Transfer Characteristics –15 V GS(off –55_C A 25_C 125_C – Gate-Source Voltage (V) GS Noise Voltage vs. Frequency I = –0 – – 100 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...