2N5432 Vishay, 2N5432 Datasheet - Page 4

• Manufacturer Part Number: 2N5432
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5432

• Breakdown Voltage Vbr: -25V
• Gate-source Cutoff Voltage Vgs(off) Max: -10V
• Continuous Drain Current Id: 150mA
• Gate-source Breakdown Voltage: -25V
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: 150mA
• Channel Type: N
• Configuration: Single
• Gate-source Voltage (max): 25V
• Drain-gate Voltage (max): -25V
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Current Rating: 100mA
• Gate-source Cutoff Voltage: -10V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2N5432/5433/5434
Vishay Siliconix
www.vishay.com
7-4
100
100
10
80
60
40
20
50
40
30
20
10
0
1
0
0
10
1
V
V
f = 1 MHz
DS
I
D
Capacitance vs. Gate-Source Voltage
DS
T
= 40 mA
= 5 V
A
= 0 V
On-Resistance vs. Drain Current
= 25_C
–4
Noise Voltage vs. Frequency
C
100
iss
V
I
D
GS
C
= 10 mA
rss
– Gate-Source Voltage (V)
I
D
f – Frequency (Hz)
V
– Drain Current (mA)
GS(off)
–8
1 k
= –2 V
10
–12
–4 V
10 k
–16
–8 V
_
100 k
–20
100
100 nA
100 pA
10 nA
10 pA
1 nA
1 pA
100
10
40
32
24
16
1
8
0
–55
0
1
V
I
r
D
DS
GS(off)
–35
T
Transconductance vs. Drain Current
T
= 10 mA
A
A
T
changes X 0.7%/_C
5 mA
= 125_C
A
= 25_C
On-Resistance vs. Temperature
I
GSS
= –55_C
4
= –4 V
–15
I
D
V
Gate Leakage Current
@ 125_C
DG
= 10 mA
10 mA
I
D
T
– Drain-Gate Voltage (V)
– Drain Current (mA)
5
A
– Temperature (_C)
8
1 mA
V
25
125_C
GS(off)
10
45
= –2 V
12
I
S-04028—Rev. F, 04-Jun-01
GSS
65
–4 V
Document Number: 70245
V
f = 1 kHz
DS
@ 25_C
= 5 V
25_C
5 mA
1 mA
85
16
–8 V
105
100
20
125