2N5566 Vishay, 2N5566 Datasheet - Page 5

• Manufacturer Part Number: 2N5566
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5566

• Breakdown Voltage Vbr: -40V
• Gate-source Cutoff Voltage Vgs(off) Max: -3V
• Power Dissipation Pd: 500mW
• Continuous Drain Current Id: 30mA
• Gate-source Breakdown Voltage: -40V
• Mounting Type: Through Hole
• Current Rating: 50mA
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 70254
S-04031—Rev. D, 04-Jun-01
1000
100
100
100
0.1
0.1
10
10
10
1
1
100
100
0.1
V
V
I
T
V
I
T
D
D
GS(off)
Output Conductance vs. Drain Current
A
A
DG
DG
= 10 mA
= 10 mA
Common-Gate Forward Admittance
= 25_C
= 25_C
Common-Gate Output Admittance
= 15 V
= 15 V
= –2 V
200
200
I
D
f – Frequency (MHz)
f – Frequency (MHz)
– Drain Current (mA)
–g
25_C
fg
1.0
V
f = 1 kHz
T
DS
b
A
g
500
500
og
og
= –55_C
= 15 V
125_C
b
fg
g
fg
_
1000
1000
10
0.01
100
100
0.1
10
10
10
1
1
1
100
0.1
10
V
I
T
D
V
A
DG
V
= 10 mA
Transconductance vs. Drain Current
GS(off)
= 25_C
DS
Common-Gate Reverse Admittance
= 15 V
= 15 V
Noise Voltage vs. Frequency
–g
= –2 V
100
I
D
–b
rg
200
= 10 mA
rg
I
D
f – Frequency (MHz)
2N5564/5565/5566
f – Frequency (Hz)
– Drain Current (mA)
I
D
25_C
= 1 mA
1 k
1.0
Vishay Siliconix
125_C
+g
V
f = 1 kHz
500
T
rg
DS
A
10 k
= –55_C
= 15 V
www.vishay.com
1000
100 k
10
8-5