U309 Vishay, U309 Datasheet - Page 2

• Manufacturer Part Number: U309
• Description: Transistor
• Manufacturer: Vishay

Specifications of U309

• Breakdown Voltage Vbr: -25V
• Gate-source Cutoff Voltage Vgs(off) Max: -4V
• Continuous Drain Current Id: 30mA
• Gate-source Breakdown Voltage: -25V
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: 12mA
• Current Rating: 20mA
• Gate-source Cutoff Voltage: -4V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

J/SST/U308 Series
Vishay Siliconix
Gate-Drain, Gate-Source Voltage
Gate Current :
Lead Temperature (
Storage Temperature :
Notes
a.
b.
c.
www.vishay.com
7-2
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain-Source On-Resistance
Gate-Source Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Common-Source
Input Capacitance
Common-Source
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
High Frequency
Common-Gate
Common-Gate
Forward Transconductance
Common-Gate
Common-Gate
Output Conductance
Common-Gate Power Gain
Noise Figure
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW v300 ms duty cycle v3%.
Gain (G
Parameter
pg
) measured at optimum input noise match.
1
/
16
” from case for 10 sec.)
b
c
(J/SST Prefixes)
(U Prefix)
(J/SST Prefixes)
(U Prefix)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . .
Symbol
V
V
r
V
(BR)GSS
DS(on)
I
GS(off)
I
C
C
G
GS(F)
g
DSS
GSS
g
NF
g
g
e
I
G
os
rss
og
iss
fg
pg
fs
n
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
V
V
I
D
DS
DS
= 10 mA
V
V
V
V
= 10 V
= 10 V
I
V
V
V
Test Conditions
V
I
V
–55 to 150_C
–65 to 175_C
G
V
DS
DS
DS
GS
G
V
f = 1 MHz
f = 1 MHz
DS
DG
GS
DS
DS
DS
GS
= –1 mA , V
DS
= 10 mA
= 10 V, I
= 10 V, I
= 10 V, I
= –15 V, V
= 10 V, V
= –10 V
= 9 V, I
= 10 V
= 10 V, I
= 0 V, I
= 0 V
f = 100 Hz
f = 1 kHz
10 mA
20 mA
300_C
–25 V
D
D
D
D
D
D
DS
GS
= 10 mA
= 1 mA
DS
= 10 mA
= 10 mA
= 10 mA
= 1 nA
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
f = 105 MHz
f = 450 MHz
T
A
= 0 V
= 0 V
= 0 V
= 125_C
Operating Junction Temperature
Power Dissipation :
Notes
a.
b.
SST
SST
J
J
J
Derate 2.8 mW/_C above 25_C
Derate 4 mW/_C above 25_C
–0.002
–0.001
Typ
0.16
0.55
11.5
–35
–15
110
0.7
1.9
1.9
1.5
2.7
35
14
14
13
16
4
4
6
a
Min Max Min Max Min Max Unit
–25
–1
12
J/SST308
8
(J/SST Prefixes)
(U Prefix)
–6.5
250
2.5
60
–1
–1
1
5
_
. . . . . . . . . . . . . . . . . . . . . . . . . .
–25
b
–1
12
10
J/SST309
Limits
. . . . . . . . . . . . . . . . . . . . . . .
a
250
2.5
. . . . . . . . . . . . . . . . .
–4
30
–1
–1
S-04028—Rev. G, 04-Jun-01
1
5
Document Number: 70237
–25
–2
24
J/SST310
8
–55 to 150_C
–6.5
250
2.5
60
–1
–1
1
5
350 mW
500 mW
mA
mS
nV
mS
nA
mA
pA
mS
dB
pF
W
V
V
V
Hz
NZB