U430-E3 Vishay, U430-E3 Datasheet - Page 5

• Manufacturer Part Number: U430-E3
• Description: MATCHED N CH JFET PAIR, -35V, TO-78
• Manufacturer: Vishay

Specifications of U430-E3

• Breakdown Voltage Vbr: -35V
• Gate-source Cutoff Voltage Vgs(off) Max: -4V
• Power Dissipation Pd: 500mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 30mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 70249
S-04031—Rev. E, 04-Jun-01
100
100
0.1
80
60
40
20
15
12
10
0
9
6
3
0
1
100
1
0
f = 1 MHz
V
I
Common–Gate
D
T
DG
A
= 10 mA
V
Common-Source Input Capacitance
= 25_C
DS
= 10 V
On-Resistance vs. Drain Current
Input Admittance vs. Frequency
V
= 0 V
–4
GS(off)
V
vs. Gate-Source Voltage
GS
200
I
= –1.5 V
– Gate-Source Voltage (V)
D
f – Frequency (MHz)
– Drain Current (mA)
–8
b
ig
10
g
ig
5 V
–12
–3 V
500
–16
1000
_
100
–20
100
100
0.1
10
80
60
40
20
10
1
0
8
6
4
2
0
100
0.1
0
f = 1 MHz
V
I
Common–Gate
D
V
DG
Circuit Voltage Gain vs. Drain Current
Capacitance vs. Gate-Source Voltage
= 10 mA
Common-Source Reverse Feedback
DS
Forward Admittance vs. Frequency
= 10 V
= 0 V
–4
V
GS
200
I
Assume V
D
A
R
– Gate-Source Voltage (V)
f – Frequency (MHz)
V
L
– Drain Current (mA)
+
+
–8
5 V
1 ) R
10 V
–g
I
1
D
Vishay Siliconix
DD
g
fg
fs
= 15 V, V
R
L
L
–12
g
b
os
–3 V
fg
V
500
GS(off)
U430/431
DS
= 5 V
–16
= –1.5 V
www.vishay.com
1000
–20
10
8-5