SI4563DY-T1-GE3 Vishay, SI4563DY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4563DY-T1-GE3
• Description: NPN & PNP MOSFET, SOIC
• Manufacturer: Vishay

Specifications of SI4563DY-T1-GE3

• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 16mohm
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 2W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4563DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.020
0.018
0.016
0.014
0.012
0.010
10
20
16
12
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
4
0
0.0
0
0
I
D
= 5 A
V
GS
12
0.6
4
= 4.5 V
V
V
DS
DS
Q
Output Characteristics
g
= 20 V
V
- Drain-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
DS
V
GS
- Drain Current (A)
Gate Charge
= 10 V
24
1.2
8
= 10 V
V
DS
= 30 V
12
36
1.8
V
GS
= 10 thru 3 V
2 V
16
48
2.4
20
60
3.0
3500
2800
2100
1400
1.8
1.5
1.2
0.9
0.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
700
- 50
0
0.0
0
On-Resistance vs. Junction Temperature
C
I
D
- 25
rss
= 5 A
0.6
V
V
T
8
GS
Transfer Characteristics
DS
J
0
- Junction Temperature (°C)
T
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
C
= 125 °C
oss
25
Capacitance
25 °C
1.2
16
S09-0393-Rev. C, 09-Mar-09
50
C
Document Number: 73513
iss
1.8
24
75
V
- 55 °C
100
GS
V
= 10 V
GS
2.4
32
= 4.5 V
125
150
3.0
40