SI4922BDY-T1-GE3 Vishay, SI4922BDY-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SI4922BDY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 30V, 8A
• Manufacturer: Vishay

Specifications of SI4922BDY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 24mohm
• Rds(on) Test Voltage Vgs: 2.5V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74459.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.2
0.1
0.02
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
1
A
1
S09-0704-Rev. B, 27-Apr-09
= P
t
2
Document Number: 74459
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 110 °C/W
1
0
1
0
0
0