SI4922BDY-T1-GE3 Vishay, SI4922BDY-T1-GE3 Datasheet - Page 6
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SI4922BDY-T1-GE3
Manufacturer Part Number
SI4922BDY-T1-GE3
Description
DUAL N CHANNEL MOSFET, 30V, 8A
Manufacturer
Vishay
Datasheet
1.SI4922BDY-T1-E3.pdf
(7 pages)
Specifications of SI4922BDY-T1-GE3
Transistor Polarity
N Channel
Continuous Drain Current Id
8A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
24mohm
Rds(on) Test Voltage Vgs
2.5V
Threshold Voltage Vgs Typ
1.8V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4922BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4922BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74459.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.2
0.1
0.02
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
10
1
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
JM
- T
t
1
A
1
S09-0704-Rev. B, 27-Apr-09
= P
t
2
Document Number: 74459
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 110 °C/W
1
0
1
0
0
0