ZXMD63P02X Diodes Inc, ZXMD63P02X Datasheet - Page 4

• Manufacturer Part Number: ZXMD63P02X
• Description: MOSFET, P CH, DUAL, -20V, -1.7A, MSOP-8
• Manufacturer: Diodes Inc

Specifications of ZXMD63P02X

• Module Configuration: Dual
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1.7A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 270mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3)
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
SYMBOL MIN.
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
4
amb
-20
-0.7
1.3
= 25°C unless otherwise stated).
TYP.
290
120
50
3.4
9.6
16.4
20.4
21.7
9.6
MAX.
-1
0.27
0.40
5.25
1.0
2.25
-0.95
100
UNIT CONDITIONS.
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
I
V
V
I
V
V
V
V
V
f=1MHz
V
R
(Refer to test
circuit)
V
I
(Refer to test
circuit)
T
V
T
di/dt= 100A/ s
D
D
D
j
j
DS
GS
GS
GS
GS
DS
DS
DD
G
DS
GS
=-250 A, V
=-250 A, V
=-1.2A
=25°C, I
=25°C, I
=6.0 , R
=-20V, V
=-10V,I
=-15 V, V
=-16V,V
= 12V, V
=-4.5V, I
=-2.7V, I
=0V
=-10V, I
S
F
D
=-1.2A,
=-1.2A,
D
GS
=-0.6A
D
D
D
GS
=8.3
GS
GS
DS
=-1.2A
=-1.2A
=-0.6A
DS
=-4.5V,
=0V
=0V,
=0V
=
=0V