SI7922DN-T1-E3 Vishay, SI7922DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7922DN-T1-E3
• Description: DUAL N CH MOSFET, 100V, POWERPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7922DN-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7922DN-T1-E3TR

Si7922DN
Vishay Siliconix
TYPICAL CHARACTERISTICS T
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.01
0.6
0.4
0.2
0.0
0.1
- 50
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
- 25
0
Threshold Voltage
T
10
J
2 5
Single Pulse
- Temperature (°C)
-3
5 0
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
D
= 250 µA
7 5
0.01
100
A
10
0.1
10
100
1
-2
= 25 °C, unless otherwise noted
0.1
* V
Safe Operating Area, Junction-to-Ambient
Limited by R
125
GS
> minimum V
Limited
I
D(on)
V
Square Wave Pulse Duration (s)
150
DS
10
- Drain-to-Source Voltage (V)
DS(on)*
Single Pulse
T
1
-1
A
= 25 °C
GS
at which R
Limited
I
DM
DS(on)
10
1
50
40
30
20
10
0
0.001
is specified
Single Pulse Power, Junction-to-Ambient
0.01
100
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
1 0
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
0.1
- T
BV
A
Time (s)
t
1
= P
DSS
t
2
DM
S-81544-Rev. E, 07-Jul-08
Document Number: 72031
1
Limited
Z
thJA
th JA
100
t
t
1
2
(t)
= 77 °C/W
10
100
600
600