SI7922DN-T1-E3 Vishay, SI7922DN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7922DN-T1-E3
• Description: DUAL N CH MOSFET, 100V, POWERPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7922DN-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7922DN-T1-E3TR

TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
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http://www.vishay.com/ppg?72031.
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-4
Duty Cycle = 0.5
Single Pulse
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0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
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-3
A
= 25 °C, unless otherwise noted
Square Wave Pulse Duration (s)
10
-2
10
-1
Vishay Siliconix
Si7922DN
www.vishay.com
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