SI7904DN-T1-E3 Vishay, SI7904DN-T1-E3 Datasheet

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... S1 3. Bottom View Ordering Information: Si7904DN-T1-E3 (Lead (Pb)-free) Si7904DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Pulse Avalanche Current Avalanche Energy a Maximum Power Dissipation ...

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... Si7904DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

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... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71643 S-81544-Rev. G, 07-Jul- °C, unless otherwise noted 2 4 °C J 0.8 1.0 1.2 Si7904DN Vishay Siliconix 1200 C iss 900 600 300 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

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... Si7904DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0 935 µA D 0.1 0.0 - 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 ...

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