IRF7410PBF International Rectifier, IRF7410PBF Datasheet - Page 6

• Manufacturer Part Number: IRF7410PBF
• Description: P CHANNEL MOSFET, -12V, 16A, SOIC
• Manufacturer: International Rectifier

Specifications of IRF7410PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -900mV
• Channel Type: P
• Current, Drain: -16 A
• Gate Charge, Total: 91 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 7 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 271 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 55 S
• Voltage, Breakdown, Drain To Source: -12 V
• Voltage, Drain To Source: –12 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±8 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

6
0.010
0.008
0.006
0.004
0.002
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -16A
6.0
8.0
0.015
0.005
0.02
0.01
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0
12V
0.0
V
GS
Same Type as D.U.T.
10.0 20.0 30.0 40.0 50.0 60.0 70.0
Current Regulator
.2µF
Drain Current
50KΩ
-3mA
-ID , Drain Current ( A )
Current Sampling Resistors
.3µF
V GS = -1.8V
I
G
D.U.T.
V GS = -4.5V
I
D
www.irf.com
V GS = -2.5V
+
-
V
DS