IRF7807ZPBF International Rectifier, IRF7807ZPBF Datasheet - Page 2
![N CHANNEL MOSFET, 30V, 11A, SOIC](/photos/22/17/221759/3770310_sml.jpg)
IRF7807ZPBF
Manufacturer Part Number
IRF7807ZPBF
Description
N CHANNEL MOSFET, 30V, 11A, SOIC
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet
1.IRF7807ZPBF.pdf
(10 pages)
Specifications of IRF7807ZPBF
Transistor Polarity
N Channel
Continuous Drain Current Id
11A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
13.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
18.2 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Fall Time
3.1 ns
Gate Charge Qg
7.2 nC
Minimum Operating Temperature
- 55 C
Rise Time
6.2 ns
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0138Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
E
I
I
I
V
t
Q
Static @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
2
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 25°C (unless otherwise specified)
Parameter
Ã
Parameter
Parameter
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
22
0.023
- 4.7
14.5
–––
–––
–––
–––
–––
–––
770
190
100
–––
–––
–––
1.8
7.2
2.1
0.7
2.7
1.7
3.4
2.8
2.5
6.9
6.2
3.1
11
10
31
17
Typ.
13.8
18.2
2.25
-100
–––
–––
––– mV/°C
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
4.8
3.1
1.0
11
88
46
26
V/°C
mΩ
nC
nC
nC
µA
nA
ns
pF
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 16
V
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
= 8.8A
= 8.8A
= 25°C, I
= 25°C, I
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 15V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
Max.
, I
8.8
63
D
Conditions
Conditions
D
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 250µA
= 8.8A, V
= 8.8A
= 8.8A, V
= 11A
= 8.8A
e
= 0V
= 0V, T
= 0V
= 4.5V
www.irf.com
D
e
e
= 1mA
DD
J
e
GS
= 125°C
= 15V
= 0V
Units
mJ
A
e