IRF9130 International Rectifier, IRF9130 Datasheet

P CH MOSFET, -100V, 11A, TO-204AA

IRF9130

Manufacturer Part Number
IRF9130
Description
P CH MOSFET, -100V, 11A, TO-204AA
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF9130

Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
300mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.35Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Continuous Drain Current
11A
Power Dissipation
75W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
2 +Tab
Package Type
TO-204AA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF9130
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF9130C
Manufacturer:
a
Quantity:
43
REPETITIVE A V ALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE (TO-204AA/AE)
Product Summary
For footnotes refer to the last page
Absolute Maximum Ratings
I D @ V GS = 0V, T C = 25°C
I D @ V GS = 0V, T C = 100°C
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of parelleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
www.irf.com
Part Number
IRF9130
P D @ T C = 25°C
T STG
dv/dt
I DM
E AR
E AS
V GS
I AR
T J
-100V
B
VDSS
R
0.30
DS(on)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
-11A
I
D
[REF:MIL-PRF-19500/562]
300 (0.063 in. (1.6mm) from case for 10s)
Features:
n
n
n
n
n
100V, P-CHANNEL
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
11.5 (typical)
-55 to 150
JANTXV2N6804
0.60
-7.0
-5.5
±20
-11
-50
-11
7.5
7 5
8 1
JANTX2N6804
TO-3
IRF9130
PD - 90549C
Units
01/22/01
W/°C
V/ns
o
mJ
mJ
W
A
A
V
g
C
1

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IRF9130 Summary of contents

Page 1

... For footnotes refer to the last page www.irf.com [REF:MIL-PRF-19500/562] 100V, P-CHANNEL I D -11A Features 300 (0.063 in. (1.6mm) from case for 10s 90549C IRF9130 JANTX2N6804 JANTXV2N6804 TO-3 Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Units -11 -7.0 - 0.60 W/° ...

Page 2

... IRF9130 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current I GSS Gate-to-Source Leakage Forward I GSS Gate-to-Source Leakage Reverse Q g Total Gate Charge ...

Page 3

... Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics www.irf.com Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF9130 3 ...

Page 4

... IRF9130 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 13 a& b www.irf.com ...

Page 5

... Fig 9. Maximum Drain Current Vs. Case Temperature Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com D.U. -10V Pulse Width µs Duty Factor Fig 10a. Switching Time Test Circuit t t d(on 10% 90 Fig 10b. Switching Time Waveforms IRF9130 - d(off ...

Page 6

... IRF9130 -20V -10V 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 15V Fig 12c. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K -12V .2 F 12V . -3mA ...

Page 7

... IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel 011 451 0111 Data and specifications subject to change without notice. 1/01 IRF9130 150°C 300 s; Duty Cycle 2% ...

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