IRF9540PBF Vishay, IRF9540PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9540PBF
• Description: P CHANNEL MOSFET, -100V, 19A TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9540PBF

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 19 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 57 ns
• Rise Time: 73 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF9540PBF

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91078
S11-0512-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91078_01
91078_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
2
1
1
10
10
Top
Bottom
0
Top
Bottom
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
This datasheet is subject to change without notice.
- 4.5 V
- 4.5 V
C
C
= 175 ° C
= 25 °C
91078_03
91078_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
- 60- 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 19 A
= - 10 V
- V
5
T
GS ,
J ,
25
Junction Temperature (°C)
IRF9540, SiHF9540
°
Gate-to-Source Voltage (V)
C
20 40 60 80 100 120 140 160 180
6
175
7
www.vishay.com/doc?91000
°
Vishay Siliconix
C
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
3